#2N3055 TRANSISTOR DATASHEET PDF#

STYLE 1 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. W/вЊ TJ, Tstg в€’ 65 to +200 вЊ Operating and Storage Junction Symbol Value Unit Collectorв€’Emitter Voltage Rating VCEO 60 Vdc Collectorв€’Emitter Voltage VCER 70 Vdc Collectorв€’Base Voltage VCB 100 Vdc Emitterв€’Base Voltage VEB 7 Vdc IC 15 Adc Collector Current в€’ ContinuousД«ase Current IB 7 Adc Total Power Dissipation TC = 25вЊ

#2N3055 TRANSISTOR DATASHEET PDF#

Pbв€’Free Packages are Available* MAXIMUM RATINGS 2N3055 Datasheet : SILICON NPN TRIPLE DIFFUSED TYPE, 2N3055 PDF Download Toshiba, 2N3055 Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference. Process CP235 Data Sheet, the 2N3055 power transistor has a silicon die (or. Like any other transistor 2N3055 has three pins namely EMITTER, BASE and COLLECTOR. The output stage transistors of a power amplifier are likely to be subjected. The device is designed for general purpose switching and amplifier applications.

Transistor, Npn, 60V, 15A, To-204Aa Transistor Polarity:npn Collector Emitter Voltage V(Br)Ceo:60V Transition. DC Current Gain в€’ hFE = 20в€’70 IC = 4 AdcД¦0 VOLTS, 115 WATTS VCE(sat) = 1.1 Vdc (Max) IC = 4 Adc 2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. Transistor GP BJT NPN 60V 15A 2-Pin TO-3.Generalв€’purpose switching and amplifier applications. Transistors - Bipolar (BJT) - Single (TRANS NPN 60V 15A TO-3). Complementary silicon power transistors are designed for Order Now Heisener will ships the parts as soon as possible.

2n3055 transistor datasheet